- Reason M, Weng X, Ye W, Dettling D, Hanson S, Obeidi G, Goldman RS, "Stress evolution in GaAsN alloy films," Journal Of Applied Physics, Vol. 97, Issue 10, pp. 103523 (2005). link
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Materials Science and Engineering, University of Michigan
Sections
- Fundamental Phenomena in Semiconductors: Strain Relaxation
| P.I.: | Rachel S. Goldman |
|---|---|
| Sponsor: | National Science Foundation DMR-9773707, DMR-0210714; National Renewable Energy Laboratory ACQ-1-31619 |