Materials Science and Engineering, University of Michigan

Sections

Fundamental Phenomena in Semiconductors: Strain Relaxation

P.I.:	Rachel S. Goldman
Sponsor:	National Science Foundation DMR-9773707, DMR-0210714; National Renewable Energy Laboratory ACQ-1-31619

In Situ Stress Measurements via Wafer Curvature Detection Technology

MSE / Research / Projects / Fundamental Phenomena in Semiconductors: Strain Relaxation

Research Staff

Matt Reason

phone: 734-936-2413

email: mreason@umich.edu

room: 2062 HH Dow

Matt received his B.A. in Physics from Hendrix College in 2001, and received his PhD in February 2006, with a thesis entitled, "Structure and Properties of Dilute Nitride GaAsN Alloys Films"

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Graduate Students

Jia-Hung Wu

email: jiahung@umich.edu
room: 2062 HH Dow
B.S. Materials Science and Engineering Nat'l Chiao Tung Univ

Jia-Hung received his B.S. degree in MSE from National Chiao Tung University. He is currently a graduate student in MSE, working on droplet motion irridiated by ion beam and molecular beam epitaxy of InAs/GaAs quantum dot superlattices.