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Materials Science and Engineering, University of Michigan

  MSE / Research / Projects / Fundamental Phenomena in Semiconductors: Alloy Formation
  1. Reason, M; Mckay, HA; Ye, W; Hanson, S; Goldman, RS; Rotberg, V, "Mechanisms of Nitrogen Incorporation in GaAsN Alloys," Applied Physics Letters, Vol. 85, Issue 10, pp. 1692 (2004). link
  2. Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT, "Initiation and Evolution of Phase Separation in GaP/InP Short-Period Superlattices," Journal of Vacuum Science & Technology B, Vol. 22, Issue 1, pp. 216 (2004). link
  3. Shin, B; Lin, A; Lappo, K; Goldman, RS; Hanna, MC; Francoeur, S; Norman, AG; Mascarenhas, A, "Initiation and Evolution of Phase Separation in Heteroepitaxial InAlAs Films," Applied Physics Letters, Vol. 80, Issue 18, pp. 3292 (2002). link
  4. Lita, B; Beck, M; Goldman, RS; Seryogin, GA; Nikishin, SA; Temkin, H, "Structural and Compositional Variations in ZnSnP2/GaAs Superlattices," Applied Physics Letters, Vol. 77, Issue 18, pp. 2894 (2000). link
  5. Lita, B; Ghaisas, S; Goldman, RS; Melloch, MR, "Nanometer-Scale Studies of Al-Ga Interdiffusion and As Precipitate Coarsening in Nonstoichiometric AlAs/GaAs Superlattices," Applied Physics Letters, Vol. 75, Issue 26, pp. 4082 (1999). link
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