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Materials Science and Engineering, University of Michigan

  MSE / Research / Projects / Fundamental Phenomena in Semiconductors: Diffusion and Segregation
  1. W. Ye, S. Hanson, M. Reason, X. Weng, and R.S. Goldman , "Control of InAs/GaAs Quantum Dot Density and Alignment Using Modified Buffer Layers," Journal Of Vacuum Science and Technology B, Vol. 23, Issue 4, pp. 1736 (2005). link
  2. Chen, W; Shin, B; Goldman, RS; Stiff, A; Bhattacharya, PK, "Mechanisms of Lateral Ordering of InAs/GaAs Quantum Dot Superlattices," Journal of Vacuum Science & Technology B, Vol. 21, Issue 4, pp. 1920 (2003). link
  3. Shin, B; Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Lateral Indium-Indium Pair Correlations within the Wetting Layers of Buried InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 81, Issue 8, pp. 1423 (2002). link
  4. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Interdiffusion, Segregation, and Dissolution in InAs/GaAs Quantum Dot Superlattices," Surface Review and Letters, Vol. 7, Issue 6-May, pp. 539 (2000).
  5. Lita, B; Ghaisas, S; Goldman, RS; Melloch, MR, "Nanometer-Scale Studies of Al-Ga Interdiffusion and As Precipitate Coarsening in Nonstoichiometric AlAs/GaAs Superlattices," Applied Physics Letters, Vol. 75, Issue 26, pp. 4082 (1999). link
  6. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Interdiffusion and Surface Segregation in Stacked Self-Assembled InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 75, Issue 18, pp. 2797 (1999). link
  7. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Nanometer-Scale Studies of Vertical Organization and Evolution of Stacked Self-Assembled InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 74, Issue 19, pp. 2824 (1999). link
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