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Materials Science and Engineering, University of Michigan

  MSE / Research / Projects / Self-Assembly of Compound Semiconductor Nanostructures: Directed Assembly of Quantum Dots using Focused Ion Beams (FIB)

Self-Assembly of Compound Semiconductor Nanostructures: Directed Assembly of Quantum Dots using Focused Ion Beams (FIB)
Materials: Semiconductors
Application: Electronic
Technique: Processing

Modification of materials such as InGaAs and GaAs through focused ion beams (FIB) may be useful in manufacturing nanoscale optoelectronic devices. The goal of this project is to integrate a UHV compatible FIB column arriving this November with our current MBE/STM system. Upon successful integration, a combination of MBE growth, FIB patterning, and STM will be used to create and study novel optoelectronic materials.

Update:
The FIB column has been sucessfully integrated with the existing MBE/STM. Initial experiments where GaAs buffer layers are grown and then patterned with the FIB followed by InAs growth are going well.
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