Thermodynamic Phase Stability and Disorder of Surface Structure in Compound Semiconductor Alloys |
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Collaborators: Prof. Anton van der Ven, University of Michigan-Ann Arbor; Dr. Normand Modine, Sandia National Laboratory
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Materials:
Semiconductors
Application: Electronic Energy Technique: Computation Characterization Synthesis |
| The nanoscale surface structure of epitaxially grown III-V semiconductor alloys plays a significant role in interfacial properties and self assembly for optoelectronic devices. In order to determine the principles which give rise to various structures and how to direct their formation in synthesis, we are taking an approach which couples computation and experiment to study phase stability, two-phase coexistence, and disorder of III-V surface reconstructions. Monte Carlo simulation employing density functional theory (DFT) energy calculations is used to predict finite-temperature entropic effects on surface structure and composition of the InxGa1-xAs model system. These results are compared to experimental data from films grown via molecular beam epitaxy (MBE) and characterized in situ via STM. |
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Materials Science and Engineering, University of Michigan
Sections
- Thermodynamic Phase Stability and Disorder of Surface Structure in Compound Semiconductor Alloys
| P.I.: | Joanna Mirecki-Millunchick |
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| Sponsor: | Department of Energy |