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Double Crystal Diffraction Topography
DCDT utilizes the change in peak spacing that comes with a bent Si wafer when it is placed into compression or tension by a film deposited onto its surface. Using a series of mathematical descriptions of this curvature, the interface stress can be calculated.
The strength of the DCDT system is that it measures curvature based on diffraction information from the single crystal substrate, rather than the physical curvature of the substrate. The technique can then be used on films which do not have a relective surface.
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