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Materials Science and Engineering, University of Michigan

  MSE / People / Faculty / Rachel S. Goldman

Articles

  1. J.-Q. Lu, H. T. Johnson, V. D. Dasika, and R. S. Goldman , "Moments-based Tight-binding Analysis of Local Electronic Structure in InAs/GaAs Quantum Dots for Comparison to Experimental Measurements," Applied Physics Letters, Vol. 88, Issue 5, pp. 053109 (2006). link
  2. Gleason, JN; Hjelmstad, ME; Dasika, VD; Goldman, RS; Fathpour, S; Charkrabarti, S; Bhattacharya, PK, "Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Alloys," Applied Physics Letters, Vol. 86, Issue 1, (2005). link
  3. Reason M, Weng X, Ye W, Dettling D, Hanson S, Obeidi G, Goldman RS, "Stress evolution in GaAsN alloy films," Journal Of Applied Physics, Vol. 97, Issue 10, pp. 103523 (2005). link
  4. S. H. Lee, A. L. Cavalieri, D. M. Fritz, M. C. Swan, R. S. Hegde, M. Reason, R. S. Goldman, and D. A. Reis, "Generation and Propagation of a Picosecond Acoustic Pulse at a Buried Interface: Time-resolved X-ray Diffraction Measurements," Physical Review Letters, Vol. 95, Issue 24, pp. 246104 (2005). link
  5. W. Ye, S. Hanson, M. Reason, X. Weng, and R.S. Goldman , "Control of InAs/GaAs Quantum Dot Density and Alignment Using Modified Buffer Layers," Journal Of Vacuum Science and Technology B, Vol. 23, Issue 4, pp. 1736 (2005). link
  6. Weng, X; Rudawski, NG; Wang, PT; Goldman, RS; Partin, DL; Heremans, J, "Effects of Buffer Layers on the Structural and Electronic Properties of InSb Films," Journal of Applied Physics, Vol. 97, Issue 4, (2005). link
  7. Weng, X; Ye, W; Clarke, SJ; Goldman, RS; Rotberg, V; Daniel, A; Clarke, R, "Matrix-Seeded Growth of Nitride Semiconductor Nanostructures using Ion Beams," Journal of Applied Physics, Vol. 97, Issue 6, pp. 64301 (2005). link
  8. Goldman, RS, "Nanoprobing of Semiconductor Heterointerfaces: Quantum Dots, Alloys and Diffusion," Journal of Physics D-Applied Physics, Vol. 37, Issue 13, pp. R163 (2004). link
  9. Reason, M; Mckay, HA; Ye, W; Hanson, S; Goldman, RS; Rotberg, V, "Mechanisms of Nitrogen Incorporation in GaAsN Alloys," Applied Physics Letters, Vol. 85, Issue 10, pp. 1692 (2004). link
  10. Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT, "Initiation and Evolution of Phase Separation in GaP/InP Short-Period Superlattices," Journal of Vacuum Science & Technology B, Vol. 22, Issue 1, pp. 216 (2004). link
  11. Weng, X; Goldman, RS; Rotberg, V; Bataiev, N; Brillson, LJ, "Origins of Luminescence from Nitrogen-Ion-Implanted Epitaxial GaAs," Applied Physics Letters, Vol. 85, Issue 14, pp. 2774 (2004). link
  12. Weng, X; Ye, W; Goldman, RS; Mabon, JC, "Formation and Blistering of GaAsN Nanostructure Layers," Journal of Vacuum Science & Technology B, Vol. 22, Issue 3, pp. 989 (2004). link
  13. Chen, W; Shin, B; Goldman, RS; Stiff, A; Bhattacharya, PK, "Mechanisms of Lateral Ordering of InAs/GaAs Quantum Dot Superlattices," Journal of Vacuum Science & Technology B, Vol. 21, Issue 4, pp. 1920 (2003). link
  14. Goldman, RS; Shin, B; Lita, B, "Mechanisms of Semiconductor Nanostructure Formation," Physica Status Solidi A-Applied Research, Vol. 195, Issue 1, pp. 151 (2003). link
  15. Shin, B; Lin, A; Lappo, K; Goldman, RS; Hanna, MC; Francoeur, S; Norman, AG; Mascarenhas, A, "Initiation and Evolution of Phase Separation in Heteroepitaxial InAlAs Films," Applied Physics Letters, Vol. 80, Issue 18, pp. 3292 (2002). link
  16. Shin, B; Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Lateral Indium-Indium Pair Correlations within the Wetting Layers of Buried InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 81, Issue 8, pp. 1423 (2002). link
  17. Weng, X; Clarke, SJ; Ye, W; Kumar, S; Goldman, RS; Daniel, A; Clarke, R; Holt, J; Sipowska, J; Francis, A; Rotberg, V, "Evolution of Structural and Optical Properties of Ion-Beam Synthesized GaAsN Nanostructures," Journal of Applied Physics, Vol. 92, Issue 7, pp. 4012 (2002). link
  18. Krishna, S; Sabarinathan, J; Linder, K; Bhattacharya, P; Lita, B; Goldman, RS, "Growth of High Density Self-Organized (In,Ga)As Quantum Dots with Ultranarrow Photoluminescence Linewidths Using Buried In(Ga,Al)As Stressor Dots," Journal of Vacuum Science & Technology B, Vol. 18, Issue 3, pp. 1502 (2000). link
  19. Lita, B; Beck, M; Goldman, RS; Seryogin, GA; Nikishin, SA; Temkin, H, "Structural and Compositional Variations in ZnSnP2/GaAs Superlattices," Applied Physics Letters, Vol. 77, Issue 18, pp. 2894 (2000). link
  20. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Interdiffusion, Segregation, and Dissolution in InAs/GaAs Quantum Dot Superlattices," Surface Review and Letters, Vol. 7, Issue 6-May, pp. 539 (2000).
  21. Weng, X; Goldman, RS; Partin, DL; Heremans, JP, "Evolution of Structural and Electronic Properties of Highly Mismatched InSb Films," Journal of Applied Physics, Vol. 88, Issue 11, pp. 6276 (2000). link
  22. Goldman, RS, "Papers from the 17th North American Conference on Molecular Beam Epitaxy - Preface," Journal of Vacuum Science & Technology B, Vol. 17, Issue 3, pp. 1115 (1999).
  23. Lita, B; Ghaisas, S; Goldman, RS; Melloch, MR, "Nanometer-Scale Studies of Al-Ga Interdiffusion and As Precipitate Coarsening in Nonstoichiometric AlAs/GaAs Superlattices," Applied Physics Letters, Vol. 75, Issue 26, pp. 4082 (1999). link
  24. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Interdiffusion and Surface Segregation in Stacked Self-Assembled InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 75, Issue 18, pp. 2797 (1999). link
  25. Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, "Nanometer-Scale Studies of Vertical Organization and Evolution of Stacked Self-Assembled InAs/GaAs Quantum Dots," Applied Physics Letters, Vol. 74, Issue 19, pp. 2824 (1999). link
  26. Chen, HJ; Feenstra, RM; Goldman, RS; Silfvenius, C; Landgren, G, "Strain Variations in InGaAsP/InGaP Superlattices Studied by Scanning Probe Microscopy," Applied Physics Letters, Vol. 72, Issue 14, pp. 1727 (1998). link
  27. Chen, N; Yang, RT; Goldman, RS, "Kinetics of Carbon-NO Reaction Studied by Scanning Tunneling Microscopy on the Basal Plane of Graphite," Journal of Catalysis, Vol. 180, Issue 2, pp. 245 (1998). link
  28. Goldman, RS; Kavanagh, KL; Wieder, HH; Ehrlich, SN; Feenstra, RM, "Effects of GaAs Substrate Misorientation on Strain Relaxation in InxGa1-xAs Films and Multilayers," Journal of Applied Physics, Vol. 83, Issue 10, pp. 5137 (1998). link
  29. Schuermeyer, F; Cheskis, D; Goldman, RS; Wieder, HH, "Photoconduction Studies on InGaAs HEMTs," Compound Semiconductors 1997, Vol. 156, pp. 303 (1998).
  30. Goldman, RS; Feenstra, RM; Briner, BG; O'steen, ML; Hauenstein, RJ, "Nanometer-Scale Studies of Nitride/Arsenide Heterostructures Produced by Nitrogen Plasma Exposure of GaAs," Journal of Electronic Materials, Vol. 26, Issue 11, pp. 1342 (1997).
  31. Goldman, RS; Feenstra, RM; Silfvenius, C; Stalnacke, B; Landgren, G, "Morphological and Compositional Variations in Strain-Compensated InGaAsP/InGaP Superlattices," Journal of Vacuum Science & Technology B, Vol. 15, Issue 4, pp. 1027 (1997). link
  32. Kavanagh, KL; Goldman, RS; Lavoie, C; Leduc, B; Pinnington, T; Tiedje, T; Klug, D; Tse, J, "In Situ Detection of Misfit Dislocations by Light Scattering," Journal of Crystal Growth, Vol. 174, Issue 4-Jan, pp. 550 (1997). link
  33. Goldman, RS; Feenstra, RM; Briner, BG; O'steen, ML; Hauenstein, RJ, "Atomic-Scale Structure and Electronic Properties of GaN/GaAs Superlattices," Applied Physics Letters, Vol. 69, Issue 24, pp. 3698 (1996). link
  34. Goldman, RS; Kavanagh, KL; Wieder, HH, "Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterostructures Grown on GaAs Substrates using Step-Graded InxGa1-xAs Buffers," Journal of Vacuum Science & Technology B, Vol. 14, Issue 4, pp. 3035 (1996). link
  35. Goldman, RS; Kavanagh, KL; Wieder, HH; Robbins, VM; Ehrlich, SN; Feenstra, RM, "Correlation of Buffer Strain Relaxation Modes with Transport Properties of Two-Dimensional Electron Gases," Journal of Applied Physics, Vol. 80, Issue 12, pp. 6849 (1996). link
  36. Margulies, DT; Parker, FT; Spada, FE; Goldman, RS; Li, J; Sinclair, R; Berkowitz, AE, "Anomalous Moment and Anisotropy Behavior in Fe3O4 Films," Physical Review B, Vol. 53, Issue 14, pp. 9175 (1996). link
  37. Goldman, RS; Chen, JH; Kavanagh, KL; Wieder, HH; Robbins, VM; Miller, JN, "Structural and Magnetotransport Properties of InGaAs/InAlAs Heterostructures Grown on Linearly-Graded Al(InGa)As Buffers on GaAs," Compound Semiconductors 1994, Issue 141, pp. 313 (1995).
  38. Goldman, RS; Wieder, HH; Kavanagh, KL; Rammohan, K; Rich, DH, "Correlation of Anisotropic Strain Relaxation with Substrate Misorientation Direction at InGaAs/GaAs(001) Interfaces," Applied Physics Letters, Vol. 67, Issue 3, pp. 344 (1995). link
  39. Lavoie, C; Pinnington, T; Nodwell, E; Tiedje, T; Goldman, RS; Kavanagh, KL; Hutter, JL, "Relationship Between Surface Morphology and Strain Relaxation During Growth of InGaAs Strained Layers," Applied Physics Letters, Vol. 67, Issue 25, pp. 3744 (1995). link
  40. Rammohan, K; Rich, DH; Goldman, RS; Chen, J; Wieder, HH; Kavanagh, KL, "Study of Micron-Scale Spatial Variations in Strain of a Compositionally Step-Graded InxGa1-xAs/GaAs(001) Heterostructure," Applied Physics Letters, Vol. 66, Issue 7, pp. 869 (1995). link
  41. Rammohan, K; Tang, Y; Rich, DH; Goldman, RS; Wieder, HH; Kavanagh, KL, "Relaxation-Induced Polarized Luminescence from InxGa1-xAs Films Grown on GaAs(001)," Physical Review B, Vol. 51, Issue 8, pp. 5033 (1995). link
  42. Rich, DH; Rammohan, K; Tang, Y; Lin, HT; Goldman, RS; Wieder, HH; Kavanagh, KL, "Influence of GaAs(001) Substrate Misorientation Towards (111) on the Optical-Properties of InxGa1-xAs/GaAs," Journal of Vacuum Science & Technology B, Vol. 13, Issue 4, pp. 1766 (1995). link
  43. Wieder, HH; Goldman, RS; Chen, JH; Young, AP, "Gate-Controlled Modulation of Charge-Transport in Long-Channel, Delta-Doped, Heterojunction Hall-Bar Structures," Journal of Vacuum Science & Technology B, Vol. 13, Issue 4, pp. 1853 (1995). link
  44. Goldman, RS; Wieder, HH; Kavanagh, KL; Rammohan, K; Rich, DH, "Anisotropic Structural, Electronic, and Optical-Properties of InGaAs Grown by Molecular-Beam Epitaxy on Misoriented Substrates," Applied Physics Letters, Vol. 65, Issue 11, pp. 1424 (1994). link
  45. Grimsditch, M; Kumar, S; Goldman, RS, "A Brillouin-Scattering Investigation of NiO," Journal of Magnetism and Magnetic Materials, Vol. 129, Issue 3-Feb, pp. 327 (1994).
  46. Kavanagh, KL; Goldman, RS; Chang, JCP, "Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures," Scanning Microscopy, Vol. 8, Issue 4, pp. 905 (1994).
  47. Raisanen, A; Brillson, LJ; Goldman, RS; Kavanagh, KL; Wieder, HH, "Optical-Detection of Misfit Dislocation-Induced Deep Levels at InGaAs/GaAs Heterojunctions," Applied Physics Letters, Vol. 64, Issue 26, pp. 3572 (1994). link
  48. Raisanen, A; Brillson, LJ; Goldman, RS; Kavanagh, KL; Wieder, HH, "Dislocation-Induced Deep-Level States in In0.08Ga0.92As/GaAs Heterostructures," Journal of Electronic Materials, Vol. 23, Issue 9, pp. 929 (1994).
  49. Raisanen, A; Brillson, LJ; Goldman, RS; Kavanagh, KL; Wieder, HH, "Strain Relaxation Induced Deep Levels in In1-xGaxAs Thin-Films," Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films, Vol. 12, Issue 4, pp. 1050 (1994). link
  50. Grier, DG; Allen, K; Goldman, RS; Sander, LM; Clarke, R, "Superlattices and Long-Range Order In Electrodeposited Dendrites," Physical Review Letters, Vol. 64, Issue 18, pp. 2152 (1990). link
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